Correlation between transport, dielectric, and optical properties of oxidized and nonoxidized porous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 20, 2007, Pages

  Urbach, B ^a   Axelrod, E ^a   Sa'ar, A ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347326140     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.205330     Document Type: Article

References (82)

1. D. K. Ferry and S. M. Goodnick, Transport in Nanostructures, (Cambridge University Press, Cambridge, 1997);
2. Single-Charge Tunneling, edited by, H. Grabet, and, M. H. Devoret, (Plenum, New York, 1992).
3. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366536 82, 909 (1997).
4. For a collection of reviews see, Light Emission in Silicon: From Physics to Devices, edited by, D. J. Lockwood, (Academic, New York, 1998);
5. W. Theiß, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/S0167-5729(96) 00012-X 29, 91 (1997);
6. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/S0167-5729(99)00012-6 38, 1 (2000);
7. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature (London) NATUAS 0028-0836 10.1038/35044012 408, 440 (2000).
8. N. Koshida and N. Matsumoto, Mater. Sci. Eng., R. MIGIEA 0927-796X 10.1016/S0927-796X(02)00135-3 40, 169 (2003);
9. L. Pavesi, C. Mazzoleni, A. Tredicucci, and V. Pellegrini, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.115220 67, 3280 (1995).
10. L. T. Canham, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.103561 57, 1046 (1990).
11. P. D. J. Calcott, K. J. Nash, L. T. Canham, M. J. Kane and D. Brumhead, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/5/7/003 5, L91 (1993);
12. R. Shinar, D. S. Robinson, J. Partee, P. A. Lane, and J. Shinar, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.358630 77, 3403 (1995).
13. M. L. Ciurea, M. Draghici, V. Iancu, M. Reshotko, and I. Balberg, J. Lumin. JLUMA8 0022-2313 10.1016/S0022-2313(02)00589-6 102, 492 (2003).
14. T. Ozaki, T. Oguro, H. Koyama, and N. Koshida, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.34.946 34, 946 (1995);
15. B. Garrido, M. Lopez, O. Gonzales, A. Peres-Rodriguez, J. R. Morante, and C. Bonafos, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1325392 77, 3143 (2000).
16. K.-H. Li, C. Tsai, J. C. Campbell, B. K. Hance, and J. M. White, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.109008 62, 3501 (1993);
17. V. Petrova-Koch, T. Muschik, A. Kux, B. K. Meyer, and F. Koch, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.107736 61, 943 (1992).
18. Th. Dittrich, H. Flietner, V. Yu. Timoshenko, and P. K. Kashkarov, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(94)05642-Q 255, 149 (1995);
19. R. R. Koropecki, R. D. Arce, and J. A. Schmidt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.205317 69, 205317 (2004);
20. L. Z. Zhang, B. Q. Zong, B. R. Zahng, Z. H. Xu, J. Q. Li, and G. G. Qin, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/7/3/023 7, 697 (1995).
21. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.197 82, 197 (1999).
22. E. A. Petrova, K. N. Bogoslovskaya, L. A. Blagurov, and G. I. Kochordaze, Mater. Sci. Eng., B MSBTEK 0921-5107 69-70, 152 (2000);
23. J. M. Lauerhaas and M. J. Sailor, Science SCIEAS 0036-8075 10.1126/science.261.5128.1567 261, 1567 (1993);
24. A. E. Pap, K. Kordas, G. Toth, J. Levoska, A. Uusimaki, and T. F. George, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1853519 86, 041501 (2005).
25. T. Ito, T. Ohta, O. Arakaki, and A. Hiraki, in Light Emission from Silicon, edited by, Subramanian S. Iyer,,, Reuben T. Collins,, and, Leigh T. Canham,, MRS Symp. Proc. No. 256 (Materials Research Society, Pittsburgh, 1992), p. 127;
26. V. Lehmann, H. Cerva, and U. Goesele, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 256, 3 (1992);
27. P. O'Keeffe, Y. Aoyagi, S. Komuro, T. Kato, and T. Morikawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.113438 66, 836 (1995).
28. Y. Lubianiker and I. Balberg, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.2433 78, 2433 (1997).
29. M. Ben-Chorin, F. Moller, F. Koch, W. Schirmacher, and M. Eberhard, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.2199 51, 2199 (1995).
30. E. Axelrod, A. Givant, J. Shappir, Y. Feldman, and A. Sa'ar, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.165429 65, 165429 (2002).
31. E. Axelrod, A. Givant, J. Shappir, Y. Feldman, and A. Sa'ar, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/S0022-3093(02)01097-9 305, 235 (2002);
32. E. Axelrod, B. Urbach, A. Sa'ar, and Y. Feldman, J. Phys. D JPAPBE 0022-3727 39, 16 (2006).
33. S. Pilla, B. Naberhuis, and J. Goodkind, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1988972 98, 024508 (2005).
34. M. Theodoropoulou, C. A. Krontiras, N. Xanthopoulos, S. N. Georga, M. N. Pisanias, C. Tsamis, and A. G. Nassiopoulou, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/S0921-5107(02)00753-5 101, 334 (2003).
35. D. G. Yarkin, L. A. Balagurov, S. C. Bayliss, and I. P. Zvyagin, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/19/1/017 19, 100 (2004).
36. W. Theiss, S. Hilbrich, R. Arens, M. G. Berger, and H. Hunter, in Structural and Optical Properties of Porous Silicon Nanostructures, edited by, G. Amato,,, C. Delerue,, and, H. J. von Bardeleben, (Gordon and Breach, New York, 1997);
37. M. S. Brandt, H. D. Fuch, M. Stutzmann, J. Weber, and M. Cardona, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(92)90815-Q 81, 307 (1992);
38. V. M. Dubin, F. Ozanam, and J.-N. Chazalviel, Vib. Spectrosc. VISPEK 0924-2031 10.1016/0924-2031(94)00035-F 8, 159 (1995).
39. K.-H. Li, D. C. Diaz, and J. C. Campbell, in Porous Silicon, edited by, Z. C. Feng, and, R. Tsu, (World Scientific, Singapore, 1994), pp. 261-274.
40. P. Li, G. Wang, Y. Ma, and R. Fang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.4057 58, 4057 (1998).
41. C. T. Kirk, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.38.1255 38, 1255 (1988).
42. A. Borghesi, A. Sassella, B. Pivac, and L. Pavesi, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(93)90524-Q 87, 1 (1993).
43. K. M. Davis and M. Tomozawa, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/0022-3093(95)00631-1 201, 177 (1996).
44. V. M. Dubin, F. Ozanam, and J. N. Chazalviel, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(94)05678-7 255, 87 (1995).
45. The CC form is a simplified version of the more general Harviliak-Negami relaxation form that has been found to better describe low-temperature relaxations in PS (see Ref.).
46. K. S. Cole and R. H. Cole, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.1750906 9, 341 (1941).
47. A. K. Jonscher, Universal Relaxation Law (Chelsea Dielectric Press, London, 1983);
48. J. C. Dyre and T. B. Schroeder, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.72.873 72, 873 (2000);
49. Y. Feldman, A. Puzenko, and Y. Ryabov, Chem. Phys. CMPHC2 0301-0104 10.1016/S0301-0104(02)00545-1 284, 139 (2002).
50. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectric Press, London, 1996).
51. C. J. F. Böttcher and P. Bordewijk, Theory of Electric Polarization (Elsevier Science, Amsterdam 1992).
52. D. W. Davidson and R. H. Cole, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.1748105 19, 1484 (1951).
53. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.197 82, 197 (1999).
54. S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y.-H. Xie, F. M. Ross, Y. J. Chabal, T. D. Harris, L. E. Brus, W. L. Brown, E. E. Chaban, P. F. Szajowski, S. B. Christman, and P. H. Citrin, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.4910 52, 4910 (1995);
55. L. Z. Zhang, B. Q. Zong, B. R. Zahng, Z. H. Xu, J. Q. Li, and G. G. Qin, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/7/3/023 7, 697 (1995).
56. G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.76.2961 76, 2961 (1996);
57. M. Luppi and S. Ossicini, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.035340 71, 035340 (2005);
58. I. Vasiliev, J. R. Chelikowsky, and R. M. Martin, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.121302 65, 121302 (R) (2002);
59. M. Nishida, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.165324 69, 165324 (2004).
60. I. Balberg, Philos. Mag. B PMABDJ 1364-2812 10.1080/014186300255339 80, 691 (2000).
61. E. Lampin, C. Delerue, M. Lannoo, and G. Allan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.12044 58, 12044 (1998).
62. H. Oeverhof and P. Thomas, Electric Transport in Hydrogenated Amorphous Semiconductors (Springer-Verlag, Berlin, 1989).
63. J. C. Dyre, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/19/28/016 19, 5655 (1986).
64. V. Lehmann, F. Hofmann, F. Moller, and U. Gruning, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(94)05624-M 255, 20 (1995).
65. M. R. Reshotko, A. Sa'ar, and I. Balberg, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200306478 197, 113 (2003);
66. A. Deligenti, A. Nannini, G. Pennneli, and F. Pieri, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116592 68, 687 (1996);
67. N. Lalic and J. Linnros, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.363594 80, 5971 (1996);
68. B. Hamilton, J. Jacobs, D. A. Hill, R. F. Fettifer, D. Teehan, and L. T. Canham, Nature (London) NATUAS 0028-0836 10.1038/30924 393, 443 (1998).
69. L. Burstein, Y. Shapira, J. Partee, J. Shinar, Y. Lubianiker, and I. Balberg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.R1930 55, R1930 (1997).
70. A. Janotta, R. Janssen, M. Schmitt, T. Graf, L. Görgens, C. Hammerl, S. Schreiber, G. Dollinger, A. Bergmaier, B. Stritzker, and M. Stutzmann, J. Non-Cryst. Solids JNCSBJ 0022-3093 299-302, 579 (2002).
71. A. Bacioglu, A. O. Kodolbas, and O. Oktu, J. Mater. Sci.: Mater. Electron. JSMEEV 0957-4522 10.1023/A:1026155826628 14, 737 (2003).
72. D. Das and A. K. Barua, Sol. Energy Mater. Sol. Cells SEMCEQ 0927-0248 10.1016/S0927-0248(99)00081-1 60, 167 (2000).
73. A. Gutina, T. Antropova, E. Rysiakiewicz-Pasek, K. Virnik, and Y. Feldman, Microporous Mesoporous Mater. MIMMFJ 1387-1811 10.1016/S1387-1811(02) 00651-0 58, 237 (2003).
74. A. Gutina, E. Axelrod, A. Puzenko, E. Rysiakiewicz-Pase, N. Kozlovich, and Y. Feldman, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/S0022-3093(98) 00562-6 235, 302 (1998).
75. A. Kux, D. Kovalev, and F. Koch, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(94)05640-Y 255, 143 (1995).
76. M. Dovrat, Y. Goshen, J. Jedrzejewsky, I. Balberg, and A. Sa'ar, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.155311 69, 155311 (2004);
77. M. Dovrat, Y. Goshen, I. Popov, J. Jedrzejewski, I. Balberg, and A. Sa'ar, Phys. Status Solidi C ZZZZZZ 1610-1634 2, 3440 (2005).
78. A. Sa'ar, Y. Reichman, M. Dovrat, D. Krapf, J. Jedrzejewsky, and I. Balberg, Nano Lett. NALEFD 1530-6984 10.1021/nl051740e 5, 2443 (2005);
79. A. Sa'ar, M. Dovrat, J. Jedrzejewsky, and I. Balberg, Physica E (Amsterdam) PELNFM 1386-9477 38, 122 (2007);
80. A. Sa'ar, M. Dovrat, J. Jedrzejewski, I. Popov, and I. Balberg, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200674401 204, 1491 (2007).
81. R. R. Nigmatullin and Ya. E. Ryabov, Phys. Solid State PSOSED 1063-7834 10.1134/1.1129804 39, 87 (1997);
82. Ya. E. Ryabov and Y. Feldman, Fractals FRACEG 0218-348X 11, 173 (2003).