Two-terminal nanocrystalline silicon memory device at room temperature

Semiconductor Science and Technology

Volumn 13, Issue 11, 1998, Pages 1328-1332

  Kamal, A H M ^a   Lutzen, J ^a   Sanborn, B A ^a   Sidorov, M V ^a   Kozicki, M N ^a   Smith, D J ^a   Ferry, D K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON;

TWO-TERMINAL NANOCRYSTALLINE SILICON MEMORY DEVICES;

DATA STORAGE EQUIPMENT;

EID: 0032204463     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/11/018     Document Type: Article

References (12)