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Volumn 101, Issue 7, 1997, Pages 513-517

The influence of the distribution of potential fluctuations on the distribution of states in amorphous semiconductors

Author keywords

A. Disordered systems; A. Semiconductors; D. Electronic states; D. Order disorder effects

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ORDER DISORDER TRANSITIONS;

EID: 0031077420     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00621-7     Document Type: Article
Times cited : (9)

References (28)
  • 11
    • 85033102413 scopus 로고    scopus 로고
    • note
    • The central limit theorem applies in situations when there is the sum over a large number of independent random variables, of comparable magnitude [12]. When there is a substantial amount of overlap between the various sources of disorder, one has a large number of independent sources of disorder contributing to the total potential at any point. Thus, the central limit theorem applies.
  • 13
    • 85033111946 scopus 로고    scopus 로고
    • note
    • In a typical amorphous semiconductor, the shortrange order about any particular atom extends to the next nearest neighbor atoms [14]. As the range of the potential fluctuations associated with the sources of disorder defines the spatial extent of this short-range order, it would be expected that the potential fluctuation associated with a typical source of disorder is only of the order of a few lattice constants in range.
  • 15
    • 85033119489 scopus 로고    scopus 로고
    • note
    • This can also be demonstrated using equation (A4) of [8], for the case of N = 1.
  • 16
    • 85033119279 scopus 로고    scopus 로고
    • note
    • nln!)exp(-λv) appears essentially linear-exponential in form.
  • 17
    • 85033119368 scopus 로고    scopus 로고
    • note
    • o).
  • 18
    • 85033103136 scopus 로고    scopus 로고
    • note
    • The analysis in [16] still applies for n very large, i.e. n ≫ λv.
  • 20
    • 85033124129 scopus 로고    scopus 로고
    • note
    • -3 would represent an upper bound to the point defect concentration in hydrogenated amorphous silicon.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.