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Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 336-340

Study of transport, trapping and recombination mechanisms in microcrystalline silicon by transient photoconductivity

(5) Vanderhaghen, R a Kasouit, S a Damon Lacoste, J a Liu, F b Roca i Cabarrocas, P a

a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY; FILMS; GRAIN BOUNDARIES; MICROSTRUCTURE; PHOTOCONDUCTIVITY; PLASMA ACCELERATORS; SIGNAL PROCESSING; SILICON COMPOUNDS; THICKNESS CONTROL;

MICROCRYSTALLINE; RECOMBINATION; SILICON FILMS; TRAPPING;

CRYSTALLINE MATERIALS;

EID: 2942530691 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.02.068 Document Type: Conference Paper

Times cited : (9)

References (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.