Electron mobility in nanocrystalline silicon devices

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Stieler, Daniel ^a   Dalal, Vikram L ^a   Muthukrishnan, Kamal ^a   Noack, Max ^a   Schares, Eric ^a  

^a Iowa State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY MOBILITY; CRYSTALLINITY; GRAIN SIZE; HOT WIRE DEPOSITION; NANOCRYSTALLINE SILICON DEVICES;

ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; ELECTRON MOBILITY; FILM GROWTH; GERMANIUM; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASTIC FILMS; RAMAN SPECTROSCOPY; STAINLESS STEEL; X RAY ANALYSIS;

SILICON;

EID: 33747459301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234545     Document Type: Article

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