Reappraisal of variable-range hopping in quantum-dot solids

Nano Letters

Volumn 8, Issue 10, 2008, Pages 3516-3520

  Houtepen, Arjan J ^a,b   Kockmann, Daan ^a,c   Vanmaekelbergh, Daniël ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS; ZINC OXIDE;

AU NANOCRYSTALS; CHARGE CONCENTRATIONS; ELECTRICAL CONDUCTIVITIES; ELECTROCHEMICALLY GATED TRANSISTORS; LOCAL ENERGIES; NON-RESONANT TUNNELING; QUANTUM-DOT SOLIDS; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; VARIABLE-RANGE HOPPING; VARIABLE-RANGE HOPPING MODELS; ZNO NANOCRYSTALS;

TEMPERATURE DISTRIBUTION;

NANOPARTICLE; QUANTUM DOT; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRON; ELECTRONICS; EQUIPMENT DESIGN; METHODOLOGY; NANOTECHNOLOGY; NORMAL DISTRIBUTION; TEMPERATURE; THEORETICAL MODEL;

ELECTROCHEMISTRY; ELECTRONICS; ELECTRONS; EQUIPMENT DESIGN; MODELS, THEORETICAL; NANOPARTICLES; NANOTECHNOLOGY; NORMAL DISTRIBUTION; QUANTUM DOTS; TEMPERATURE; ZINC OXIDE;

EID: 56149121067     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8020347     Document Type: Article

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