Hole drift-mobility measurements in microcrystalline silicon

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Dylla, T ^a   Finger, F ^a   Schiff, E A ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b SYRACUSE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE DRIFT-MOBILITY; NONCRYSTALLINE MATERIALS; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSIENT PHOTOCURRENTS;

ELECTRON MOBILITY; ELECTRON TRAPS; PHOTOCURRENTS; SILICON;

CRYSTALLINE MATERIALS;

EID: 24144475019     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1984087     Document Type: Article

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