The sign of the hall effect in hydrogenated amorphous and disordered crystalline silicon

Philosophical Magazine Letters

Volumn 74, Issue 6, 1996, Pages 455-464

  Nebel, C E ^a   Rother, M ^a   Stutzmann, M ^a   Summonte, C ^b   Heintze, M ^c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b CNR   (Italy)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; HALL EFFECT; NANOSTRUCTURED MATERIALS; RAMAN SPECTROSCOPY; VOLUME FRACTION;

CRYSTALLINE SILICON; DEFECT DENSITIES; MICROCRYSTALLINE AMORPHOUS SILICON; MICROCRYSTALLINE GROWTH; MICROCRYSTALLINE SILICON; NANOCRYSTALLINE SILICON; SILICON IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0030418572     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008396179995     Document Type: Article

References (11)

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