Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 8, 2003, Pages

  Daldosso, N ^a   Luppi, M ^b   Ossicini, S ^b   Degoli, E ^b   Magri, R ^b   Dalba, G ^a   Fornasini, P ^a   Grisenti, R ^a   Rocca, F ^c   Pavesi, L ^a   Boninelli, S ^d   Priolo, F ^d   Spinella, C ^e   Iacona, F ^e  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c IFN CNR   (Italy)

^d UNIVERSITY OF CATANIA   (Italy)

^e CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

AB INITIO CALCULATION; ABSORPTION SPECTROSCOPY; ARTICLE; CHEMICAL COMPOSITION; CONFORMATIONAL TRANSITION; CRYSTAL; ELECTRON; ENERGY; LIGHT EMITTING DIODE; MEASUREMENT; NANOPARTICLE; PHOTOLUMINESCENCE; STOICHIOMETRY; STRUCTURE ANALYSIS; SURFACE PROPERTY; THEORY; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

EID: 84871291922     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.085327     Document Type: Article

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