Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 186-189

  Makihara, Katsunori ^a   Xu, Jun ^a   Ikeda, Mitsuhisa ^a   Murakami, Hideki ^a   Higashi, Seiichiro ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

AFM Kelvin probe; LPCVD; Phosphorous doping; Si quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRON ENERGY LEVELS; HELIUM; PHOSPHORUS; PYROLYSIS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

AFM/KELVIN PROBE; LPCVD; PHOSPHOROUS DOPING; SI QUANTUM DOT;

THIN FILMS;

EID: 33646119194     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.352     Document Type: Article

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