Electrical transport properties of microcrystalline silicon grown by plasma enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7306-7311

  Pinto, Nicola ^a   Ficcadenti, Marco ^a   Morresi, Lorenzo ^a   Murri, Roberto ^a   Ambrosone, Giuseppina ^b   Coscia, Ubaldo ^b  

^a UNIVERSITY OF CAMERINO   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM GROWTH; HALL EFFECT; HYDROGENATION; MATHEMATICAL MODELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSPORT PROPERTIES;

DARK CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; HALL MOBILITY; MICROCRYSTALLINE SILICON;

SILICON;

EID: 11144248549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812818     Document Type: Article

References (23)

1. S. Veprek and V. Malecek, Solid-State Electron. 11, 683 (1968).
2. J. Meier et al., in Proceedings of the 1998 Second World Conference on Photovoltaic Solar Energy Conversion, edited by J. Schmid, H. A. Offenbrink, P. Helm, H. Ehmann, and E. D. Dunlop (Vienna, Austria, 1998), pp. 375-380; J. Meier, R. Fluckiger, H. Keppner, and A. Shah, Appl. Phys. Lett. 65, 860 (1994).
3. J. Meier et al., in Proceedings of the 1998 Second World Conference on Photovoltaic Solar Energy Conversion, edited by J. Schmid, H. A. Offenbrink, P. Helm, H. Ehmann, and E. D. Dunlop (Vienna, Austria, 1998), pp. 375-380; J. Meier, R. Fluckiger, H. Keppner, and A. Shah, Appl. Phys. Lett. 65, 860 (1994).
4. M. Mulato, Y. Chen, S. Wagner, and A. R. Zanatta, J. Non-Cryst. Solids 266-269, 1260 (2000).
5. P. Alpuim, V. Chu, and J. P. Conde, J. Appl. Phys. 86, 3812 (1999).
6. U. Coscia, G. Ambrosone, P. Maddalena, S. Lettieri, M. Ambrico, and C. Minarini, Thin Solid Films 403-404, 130 (2002).
7. G. Ambrosone, U. Coscia, S. Lettieri, and P. Maddalena, Mater. Sci. Eng., B 101, 236 (2003).
8. H. Wieder, M. Cardona, and C. R. Guarnieri, Phys. Status Solidi B 92, 99 (1979).
9. D. K. Basa and F. W. Smith, Thin Solid Films 193, 121 (1990).
10. Y. Mishima, S. Miyaaki, M. Hirose, and Y. Osaka, Philos. Mag. B 46, 1 (1982); T. Itoh, K. Yamamoto, K. Ishikoshi, S. Nonomura, and S. Nitta, J. Non-Cryst. Solids 266-269, 201 (2000).
11. Y. Mishima, S. Miyaaki, M. Hirose, and Y. Osaka, Philos. Mag. B 46, 1 (1982); T. Itoh, K. Yamamoto, K. Ishikoshi, S. Nonomura, and S. Nitta, J. Non-Cryst. Solids 266-269, 201 (2000).
12. W. Paul and D. A. Anderson, Sol. Energy Mater. Sol. Cells 5, 229 (1981); J. Kočka et al., J. Non-Cryst. Solids 299-302, 355 (2002); F. Liu, M. Zhu, Y. Feng, Y. Han, J. Liu, S. Kasouit, and R. Vanderhaghen, ibid. 299-302, 385 (2002).
13. W. Paul and D. A. Anderson, Sol. Energy Mater. Sol. Cells 5, 229 (1981); J. Kočka et al., J. Non-Cryst. Solids 299-302, 355 (2002); F. Liu, M. Zhu, Y. Feng, Y. Han, J. Liu, S. Kasouit, and R. Vanderhaghen, ibid. 299-302, 385 (2002).
14. W. Paul and D. A. Anderson, Sol. Energy Mater. Sol. Cells 5, 229 (1981); J. Kočka et al., J. Non-Cryst. Solids 299-302, 355 (2002); F. Liu, M. Zhu, Y. Feng, Y. Han, J. Liu, S. Kasouit, and R. Vanderhaghen, ibid. 299-302, 385 (2002).
15. J. W. Orton and M. J. Powell, Rep. Prog. Phys. 43, 1263 (1980).
16. R. Vanderhaghen, S. Kasouit, R. Benot, V. Chu, J. P. Conde, F. Liu, A. De Martino, and P. Roca i Cabarrocas, J. Non-Cryst. Solids 299-302, 365 (2002).
17. W. E. Spear, G. Willeke, and P. G. Le Comber, Physica B & C 117, 908 (1983).
18. V. Augelli and R. Murri, J. Non-Cryst. Solids 59-60, 481 (1983).
19. R. Murri, N. Pinto, G. Ambrosone, and U. Coscia, Phys. Rev. B 62, 1801 (2000).
20. R. Murri, N. Pinto, G. Ambrosone, U. Coscia, and P. Musto, J. Non-Cryst. Solids 299-302, 902 (2002).
21. R. Murri, N. Pinto, S. Giuliodori, G. Ambrosone, and U. Coscia, J. Mater. Sci.: Mater. Electron. 14, 341 (2003).
22. R. Meaudre, P. Jensen, and M. Meaudre, Phys. Rev. B 38, 12449 (1988), and references therein.
23. R. Bisaro, J. Magarino, Y. Pastol, P. German, and K. Zellama, Phys. Rev. B 40, 7655 (1989).