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Volumn 299-302, Issue , 2002, Pages 179-184
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Temperature dependence of the photoconductivity of arsenic-doped hydrogenated amorphous germanium thin films
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ARSENIC;
CARRIER MOBILITY;
ENERGY GAP;
FERMI LEVEL;
HYDROGENATION;
PHOTOCONDUCTIVITY;
PHOTONS;
QUENCHING;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
CONDUCTION BANDS;
THERMAL ACTIVATION;
THIN FILMS;
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EID: 0036540537
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(01)01159-0 Document Type: Article |
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Times cited : (4)
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References (14)
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