High mobility metal S/D III-V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 242-243

  Yokoyama, M ^a   Yasuda, T ^b   Takagi, H ^b   Yamada, H ^c   Fukuhara, N ^c   Hata, M ^c   Sugiyama, M ^a   Nakano, Y ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE OPERATIONS; DIRECT WAFER BONDING; ENHANCEMENT FACTOR; HIGH ELECTRON MOBILITY; HIGH MOBILITY; II-IV SEMICONDUCTORS; INSULATOR STRUCTURE; METAL SOURCE/DRAIN; MOSFETS; NMOSFET; NMOSFETS; SI SUBSTRATES; THIN BODY;

ELECTRON MOBILITY; MOSFET DEVICES; SEMICONDUCTING INDIUM; SILICON; SILICON WAFERS; SUBSTRATES; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71049153734     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. S. Takagi, et al., Solid State Electron., vol. 51, pp. 526-536, 2007.
2. F. Ren, et al., Solid State Electron., vol. 41, pp. 1751-1753, 1997.
3. K. Rajagopalan, et al., IEEE EDL, vol. 27, pp. 959-962, 2006.
4. Y. Xuan, et al., Appl. Phys. Lett., vol. 88, pp. 263518, 2006.
5. Y. Q. Wu, et al., Appl. Phys. Lett., vol. 91, pp. 022108, 2007.
6. N. Li, et al., Appl. Phys. Lett., vol. 92, pp. 143507, 2008.
7. D. Liang, et al., IEEE ECTC, pp. 979-984, 2008.
8. H. W. Chen, et al., IEEE PTL., vol. 20, pp. 1920-1922, 2008.