Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 933-939

  Nguyen, N D ^a,b   Wang, G ^a   Brammertz, G ^a   Leys, M ^a   Waldron, N ^a   Winderickx, G ^a   Lismont, K ^a   Dekoster, J ^a   Loo, R ^a   Meuris, M ^a   Degroote, S ^a   Buttita, F ^c   O'Neil, B ^c   Feron O ^c   Lindner, J ^c   Schulte, F ^c   Schineller, B ^c   Heuken, M ^c   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LIÈGE   (Belgium)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE MANUFACTURE; BUFFER LAYERS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MORPHOLOGY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SI-GE ALLOYS; SILICA; SILICON WAFERS;

HIGH PERFORMANCE DEVICES; INDUSTRIAL REACTORS; LOGIC APPLICATIONS; MANUFACTURING LINES; MATERIAL DEPOSITION; SELECTIVE EPITAXIAL GROWTH; SEMICONDUCTOR HETEROSTRUCTURES; SHALLOW TRENCH ISOLATION;

SUBSTRATES;

EID: 79551600959     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487625     Document Type: Conference Paper

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