High electron mobility metal-insulator-semiconductor field-effect transistors fabricated on (111)-oriented InGaAs channels

Applied Physics Express

Volumn 2, Issue 12, 2009, Pages

  Ishii, Hiroyuki ^a   Miyata, Noriyuki ^a   Urabe, Yuji ^a   Itatani, Taro ^a   Yasuda, Tetsuji ^a   Yamada, Hisashi ^a   Fukuhara, Noboru ^b   Hata, Masahiko ^b   Deura, Momoko ^c   Sugiyama, Masakazu ^c   Takenaka, Mitsuru ^c   Takagi, Shinichi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; HIGH ELECTRON MOBILITY; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS;

CARRIER CONCENTRATION; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAMS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR INSULATOR BOUNDARIES; SULFUR;

FIELD EFFECT TRANSISTORS;

EID: 73149094091     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.121101     Document Type: Article

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