High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1092-1094

  Morii, K ^a   Iwasaki, T ^a   Nakane, R ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Gas phase doping; Ge nMOSFETs; high mobility

Indexed keywords

ARSENIC DIFFUSION; GASPHASE; HIGH ELECTRON MOBILITY; HIGH MOBILITY; JUNCTION LEAKAGE CURRENTS; MOSFETS; MOVPE; N-CHANNEL; NMOSFETS; SOURCE/DRAIN JUNCTIONS;

ARSENIC; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; GASES; MOSFET DEVICES;

GERMANIUM;

EID: 77957574073     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2061211     Document Type: Article

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