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Volumn 312, Issue 8, 2010, Pages 1348-1352
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Initial growth of InAs on P-terminated Si(1 1 1) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si
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Author keywords
A1. Surface processes; A3. Metal organic vapor phase epitaxy; A3. Selective area growth; B2. Semiconducting III V materials
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Indexed keywords
GROWTH AREAS;
IN-SITU;
INAS;
INAS ISLAND;
INCUBATION PERIODS;
INITIAL STAGES;
LATERAL GROWTH;
METAL-ORGANIC VAPOR PHASE EPITAXY;
SELECTIVE AREA GROWTH;
SEMI CONDUCTING III-V MATERIALS;
SI (1 1 1);
SI SURFACES;
SURFACE COVERAGES;
SURFACE ENERGIES;
SURFACE PRETREATMENT;
SURFACE PROCESS;
SURFACE REFLECTIVITY;
TERTIARYBUTYLPHOSPHINE;
XPS ANALYSIS;
CRYSTAL GROWTH;
INTERFACIAL ENERGY;
NUCLEATION;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR GROWTH;
SILICON;
SURFACE CHEMISTRY;
SURFACE TENSION;
SURFACES;
VAPORS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 77949586141
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.11.064 Document Type: Article |
Times cited : (13)
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References (8)
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