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Volumn 312, Issue 8, 2010, Pages 1348-1352

Initial growth of InAs on P-terminated Si(1 1 1) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si

Author keywords

A1. Surface processes; A3. Metal organic vapor phase epitaxy; A3. Selective area growth; B2. Semiconducting III V materials

Indexed keywords

GROWTH AREAS; IN-SITU; INAS; INAS ISLAND; INCUBATION PERIODS; INITIAL STAGES; LATERAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; SELECTIVE AREA GROWTH; SEMI CONDUCTING III-V MATERIALS; SI (1 1 1); SI SURFACES; SURFACE COVERAGES; SURFACE ENERGIES; SURFACE PRETREATMENT; SURFACE PROCESS; SURFACE REFLECTIVITY; TERTIARYBUTYLPHOSPHINE; XPS ANALYSIS;

EID: 77949586141     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.064     Document Type: Article
Times cited : (13)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.