Thin Body Ill-V-semiconductor-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated using direct wafer bonding

Applied Physics Express

Volumn 2, Issue 12, 2009, Pages

  Yokoyama, Masafumi ^a   Yasuda, Tetsuji ^a,b   Takagi, Hideki ^a,b   Yamada, Hisashi ^a,c   Fukuhara, Noboru ^a,c   Hata, Masahiko ^a   Sugiyama, Masakazu ^a   Nakano, Yoshiaki ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT WAFER BONDING; ELECTRON CHANNEL; LOW DAMAGES; LOW ENERGY ELECTRONS; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; N-CHANNEL; NMOSFET; NMOSFETS; SI WAFER; THIN BODY; ULTRATHIN BODY;

CYCLOTRONS; DIELECTRIC DEVICES; ELECTRON CYCLOTRON RESONANCE; FIELD EFFECT TRANSISTORS; ION BEAMS; MOSFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; WAFER BONDING;

SILICON WAFERS;

EID: 73149085966     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.124501     Document Type: Article

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