1μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm

Electronics Letters

Volumn 44, Issue 7, 2008, Pages 498-500

  Hill, R J W ^a   Droopad, R ^b   Moran, D A J ^a   Li, X ^a   Zhou, H ^a   MacIntyre, D ^a   Thoms, S ^a   Ignatova, O ^a   Asenov, A ^a   Rajagopalan, K ^b   Fejes, P ^b   Thayne, I G ^a   Passlack, M ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HETEROJUNCTIONS; MOSFET DEVICES; TRANSCONDUCTANCE;

FLATBAND-MODE; MAXIMUM DRIVE CURRENT;

GATE DIELECTRICS;

EID: 41149176589     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080470     Document Type: Article

References (16)

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