Atomic-layer-deposited Al2O3 /GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages

  Wu, Y Q ^a   Xu, M ^a   Ye, P D ^a   Cheng, Z ^b   Li, J ^b   Park, J S ^b   Hydrick, J ^b   Bai, J ^b   Carroll, M ^b   Fiorenza, J G ^b   Lochtefeld, A ^b  

^a PURDUE UNIVERSITY   (United States)

^b AmberWave Systems Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC PHYSICS; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; LATTICE MISMATCH; MOS DEVICES; MOSFET DEVICES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PRESSURE DROP; SEMICONDUCTING GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SUBSTRATES; TRANSISTORS; VAPOR DEPOSITION;

EPILAYERS GROWN; EPITAXIALLY GROWN; GATE LENGTHS; GATE OXIDES; HIGH QUALITIES; MAXIMUM DRAIN CURRENTS; MOS FETS; N-DOPED; ORGANIC CHEMICAL VAPOR DEPOSITIONS; PATTERNED SILICONS; PEAK VALUES; SEMI-CONDUCTORS; SI SUBSTRATES; SURFACE MOBILITIES; THREADING DISLOCATIONS; TRAPPING TECHNIQUES;

GALLIUM ALLOYS;

EID: 57849142451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050466     Document Type: Article

References (15)

1. E. A. Fitzgerald and N. Chand, J. Electron. Mater. 0361-5235 10.1007/BF02665973 20, 839 (1991).
2. D. B. Noble, J. L. Hoyt, C. A. King, J. F. Gibbons, T. I. Kamins, and M. P. Scott, Appl. Phys. Lett. 0003-6951 10.1063/1.103176 56, 51 (1990).
3. R. M. Sieg, S. A. Ringel, S. M. Ting, S. B. Samavedam, M. Currie, T. Langdo, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.589968 16, 1471 (1998).
4. T. A. Langdo, C. W. Leitz, M. T. Currie, E. A. Fitzgerald, A. Lochtefeld, and D. A. Antoniadis, Appl. Phys. Lett. 0003-6951 10.1063/1.126754 76, 3700 (2000).
5. Q. Li, S. M. Han, S. R. J. Brueck, S. Hersee, Y. -B. Jiang, and H. Xu, Appl. Phys. Lett. 0003-6951 10.1063/1.1632037 83, 5032 (2003).
6. S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait, D. Loubychev, W. K. Liu, M. Radosavljevic, W. Rachmady, and R. Chau, IEEE Electron Device Lett. 28, 685 (2007). 0741-3106
7. M. M. Oye, D. Shahrjerdi, I. Ok, J. B. Hurst, S. D. Lewis, S. Dey, D. Q. Kelly, S. Joshi, T. J. Mattord, X. Yu, M. A. Wistey, J. S. Harris, Jr., A. L. Holmes, Jr., J. C. Lee, and S. K. Banerjee, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2713119 25, 1098 (2007).
8. D. Choi, E. Kim, P. C. Mclntyre, and J. S. Harris, Appl. Phys. Lett. 0003-6951 10.1063/1.2929386 92, 203502 (2008).
9. D. Shahrjerdi, N. Nuntawong, G. Balakrishnan, D. I. Garcia-Gutierrez, A. Khoshakhlagh, E. Tutuc, D. Huffaker, J. C. Lee, and S. K. Banerjee, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2835061 26, 1182 (2008).
10. J. -S. Park, J. Bai, M. Curtin, B. Adekore, M. Carroll, and A. Lochtefeld, Appl. Phys. Lett. 0003-6951 10.1063/1.2435603 90, 052113 (2007).
11. J. Bai, J. -S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Carroll, A. Lochtefeld, and M. Dudley, Appl. Phys. Lett. 0003-6951 10.1063/1.2711276 90, 101902 (2007).
12. J. Z. Li, J. Bai, J. -S. Park, B. Adekore, K. Fox, M. Carroll, A. Lochtefeld, and Z. Shellenbarger, Appl. Phys. Lett. 0003-6951 10.1063/1.2756165 91, 021114 (2007).
13. J. Z. Li, J. Bai, C. Major, M. Carroll, A. Lochtefeld, and Z. Shellenbarger, J. Appl. Phys. 0021-8979 10.1063/1.2924410 103, 106102 (2008).
14. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H. J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 10.1063/1.1590743 83, 180 (2003).
15. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 10.1063/1.1641527 84, 434 (2004).