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Volumn 5, Issue 9, 2008, Pages 2733-2735

Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) si micro channel areas

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; EPITAXIAL LATERAL OVERGROWTH; GAAS; INSULATOR STRUCTURE; LATERAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; SELECTIVE AREA GROWTH; SELECTIVE AREAS; SELECTIVE GROWTH; SI SUBSTRATES; TRADE-OFF RELATIONSHIP;

EID: 56249135313     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779309     Document Type: Conference Paper
Times cited : (36)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.