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Volumn 5, Issue 9, 2008, Pages 2733-2735
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Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) si micro channel areas
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL QUALITIES;
EPITAXIAL LATERAL OVERGROWTH;
GAAS;
INSULATOR STRUCTURE;
LATERAL GROWTH;
METAL-ORGANIC VAPOR PHASE EPITAXY;
MOVPE;
SELECTIVE AREA GROWTH;
SELECTIVE AREAS;
SELECTIVE GROWTH;
SI SUBSTRATES;
TRADE-OFF RELATIONSHIP;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
MORPHOLOGY;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SILICON;
SILICON COMPOUNDS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 56249135313
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200779309 Document Type: Conference Paper |
Times cited : (36)
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References (4)
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