Electron mobility in high-k Ge-MISFETs goes up to higher

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 209-210

  Nishimura, T ^a,b   Lee, C H ^a   Wang, S K ^a   Tabata, T ^a   Kita, K ^a,b   Nagashio, K ^a,b   Toriumi, A ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Ge; GeO2; Mobility; Rare earth oxide

Indexed keywords

GE; GEO2; HIGH-K GATE STACKS; MOBILITY; PEAK MOBILITY; PRESSURE OXIDATION; RARE EARTH OXIDE;

ELECTRON MOBILITY; MISFET DEVICES; OXIDATION;

GERMANIUM;

EID: 77957861096     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556230     Document Type: Conference Paper

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