Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics

Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

  Xu, M ^a   Wu, Y Q ^a   Koybasi, O ^a   Shen, T ^a   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CHANNEL LENGTH; EMPIRICAL MODEL; EXPERIMENTAL OBSERVATION; GAAS; MAXIMUM DRAIN CURRENT; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; N-CHANNEL;

ATOMS; DIELECTRIC DEVICES; DRAIN CURRENT; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); ION BEAMS; MOS CAPACITORS; MOSFET DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING GALLIUM;

FIELD EFFECT TRANSISTORS;

EID: 66549099372     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3147218     Document Type: Article

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