X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Nano Letters

Volumn 11, Issue 7, 2011, Pages 2875-2880

  Hrauda, Nina ^a   Zhang, Jianjun ^a,f   Wintersberger, Eugen ^a,g   Etzelstorfer, Tanja ^a   Mandl, Bernhard ^a   Stangl, Julian ^a   Carbone, Dina ^b   Holý, Vaclav ^c   Jovanović, Vladimir ^d,h   Biasotto, Cleber ^d,i   Nanver, Lis K ^d   Moers, Jürgen ^e   Grützmacher, Detlev ^e   Bauer, Günther ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c CHARLES UNIVERSITY   (Czech Republic)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

^f IFW DRESDEN   (Germany)

^g DESY   (Germany)

^h UNIVERSITY OF ZAGREB   (Croatia)

ⁱ UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

finite element simulations; ordered island growth; semiconductor nanostructures; silicon germanium; structural investigations; X ray nanodiffraction

Indexed keywords

FINITE ELEMENT SIMULATIONS; ORDERED ISLANDS; SEMICONDUCTOR NANOSTRUCTURES; SILICON GERMANIUM; STRUCTURAL INVESTIGATION; X-RAY NANODIFFRACTION;

FIELD EFFECT TRANSISTORS; GERMANIUM; MECHANICAL PROPERTIES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; X RAYS;

TRANSISTORS;

GERMANIUM; QUANTUM DOT; SILICON;

ARTICLE; CHEMISTRY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; X RAY;

GERMANIUM; NANOTECHNOLOGY; PARTICLE SIZE; QUANTUM DOTS; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC; X-RAYS;

EID: 79960234468     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2013289     Document Type: Article

References (38)

1. Coleman, J. J. Strained-layer InGaAs quantum-well heterostructure lasers IEEE J. Sel. Top. Quantum Electron. 2000, 6, 1008-1013 (Pubitemid 32255316)
2. Sun, Y.; Thompson, S. E.; Nishida, T. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 2007, 101, 104503
3. Ieong, M.; Doris, B.; Kedzierski, J.; Rim, K.; Yang, M. Silicon Device Scaling to the Sub-10-nm Regime Science 2004, 306, 2057-2060 (Pubitemid 40007650)
4. Thompson, S. E. A 90-nm logic technology featuring strained-silicon IEEE Trans. Electron Devices 2004, 51, 1790-1797
5. Dhar, S.; Kosina, H.; Palankovski, V.; Ungersboeck, S. E.; Selberherr, S. Electron mobility model-for strained-Si devices IEEE Transactions On Electron Devices 2005, 52, 527-533 (Pubitemid 40535878)
6. Donaton, R. A.; Chidambarrao, D.; Johnson, J.; Chang, P.; Liu, Y.; Henson, W. K.; Holt, J.; Li, X.; Li, J.; Domenicucci, A.; Madan, A.; Rim, K.; Wann, C. Design and fabrication of MOSFETs with a reverse embedded SiGe (Rev. e-SiGe) structure Tech. Dig.-Int. Electron Devices Meet. 2006, 1-4
7. Ang, K. W.; Tung, C. H.; Balasubramanian, N.; Samudra, G. S.; Yeo, Y. C. Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure IEEE Electron. Device Lett. 2007, 28, 609-612 (Pubitemid 47040466)
8. Ang, K. W.; Lin, J.; Tung, C. H.; Balasubramanian, N.; Samudra, G. S.; Yeo, Y. C. Strained n-MOSFET with embedded Source/Drain stressors and strain-transfer structure (STS) for enhanced transistor performance IEEE Trans. Electron Devices 2008, 55, 850-857 (Pubitemid 351404544)
9. Packan, P. High performance 32 nm logic technology featuring 2nd generation high-k + metal gate transistors Tech. Dig.-Int. Electron Devices Meet. (IEDM 2009) 2009, 4
10. Hytch, M.; Houdellier, F.; Hue, F.; Snoeck, E. Nanoscale holographic interferometry for strain measurements in electronic devices Nature 2008, 453, 1086-U5
11. Hue, F.; Hytch, M.; Bender, H.; Houdellier, F.; Claverie, A. Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy Phys. Rev. Lett. 2008, 100, 156602
12. Snigireva, I.; Snigirev, A. X-Ray microanalytical techniques based on synchrotron radiation J. Environ. Monit. 2006, 8, 33-42 (Pubitemid 43362482)
13. Robinson, I.; Harder, R. Coherent X-ray diffraction imaging of strain at the nanoscale Nat. Mater. 2009, 8, 291-298
14. Stangl, J.; Holy, V.; Bauer, G. Structural properties of self-organized semiconductor nanostructures Rev. Mod. Phys. 2004, 76, 725-783 (Pubitemid 40180191)
15. Mocuta, C.; Stangl, J.; Mundboth, K.; Metzger, T. H.; Bauer, G.; Vartanyants, I. A.; Schmidbauer, M.; Boeck, T. Beyond the ensemble average: X-ray microdiffraction analysis of single SiGe islands Phys. Rev. B 2008, 77, 245425
16. Hanke, M.; Dubslaff, M.; Schmidbauer, M.; Boeck, T.; Schoder, S.; Burghammer, M.; Riekel, C.; Patommel, J.; Schroer, C. G. Scanning x-ray diffraction with 200 nm spatial resolution Appl. Phys. Lett. 2008, 92, 193109
17. Biermanns, A.; Davydok, A.; Paetzelt, H.; Diaz, A.; Gottschalch, V.; Metzger, T. H.; Pietsch, U. Individual GaAs nanorods imaged by coherent X-ray diffraction J. Synchrotron Radiat. 2009, 16, 796-802
18. Scheler, T.; Rodrigues, M.; Cornelius, T. W.; Mocuta, C.; Malachias, A.; Magalhaes-Paniago, R.; Comin, F.; Chevrier, J.; Metzger, T. H. Probing the elastic properties of individual nanostructures by combining in situ atomic force microscopy and micro-x-ray diffraction Appl. Phys. Lett. 2009, 94, 023109
19. Rodrigues, M. S.; Cornelius, T. W.; Scheler, T.; Mocuta, C.; Malachias, A.; Magalhaes-Paniago, R.; Dhez, O.; Comin, F.; Metzger, T. H.; Chevrier, J. In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction J. Appl. Phys. 2009, 106, 103525
20. Newton, M. N.; Leake, S. J.; Harder, R.; Robinson, I. K. Three-dimensional imaging of strain in a single ZnO nanorod (vol 9, pg 120, 2010) Nat. Mater. 2010, 9, 279-279
21. Dubslaff, M.; Hanke, M.; Schoder, S.; Burghammer, M.; Boeck, T.; Patommel, J. X-ray nanodiffraction at individual SiGe/Si(001) dot molecules and its numerical description based on kinematical scattering theory Appl. Phys. Lett. 2010, 96, 133107
22. Diaz, A.; Mocuta, C.; Stangl, J.; Vila-Comamala, J.; David, C.; Metzger, T. H.; Bauer, G. Spatially resolved strain within a single SiGe island investigated by X-ray scanning microdiffraction Phys. Status Solidi A 2009, 206, 1829-1832
23. Mino, L.; Gianolio, D.; Agostini, G.; Piovano, A.; Truccato, M.; Agostino, A.; Cagliero, S.; Martinez-Criado, G.; Codato, S.; Lamberti, C. Structural Characterization of Multi-Quantum Wells in Electroabsorption- Modulated Lasers by using Synchrotron Radiation Micrometer-Beams. Adv. Mater. 2010, 22, 2050
24. Schmidt, O. G.; Eberl, K. Self-Assembled Ge/Si Dots for Faster Field-Effect Transistors IEEE Trans. Electron Devices 2001, 48, 1175
25. Fregonese, S.; Zhuang, Y.; Burghartz, J. N. Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics Solid-State Electron. 2008, 52, 919-925
26. Jovanović, V.; Biasotto, C.; Nanver, L. K.; Moers, J.; Grutzmacher, D.; Gerharz, J.; Mussler, G.; van der Cingel, J.; Zhang, J. J.; Bauer, G.; Schmidt, O. G.; Miglio, L. n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility IEEE Electron Device Lett. 2010, 31, 1083-1085
27. Zhang, J. J.; Stoffel, M.; Rastelli, A.; Schmidt, O. G.; Jovanovic, V.; Nanver, L. K.; Bauer, G. SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening Appl. Phys. Lett. 2007, 91, 173115
28. Hesse, A.; Stangl, J.; Holy, V.; Roch, T.; Bauer, G.; Schmidt, O. G.; Denker, U.; Struth, B. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) Phys. Rev. B: Condens. Matter Mater. Phys. 2002, 66 (8) 85321
29. Stangl, J.; Hesse, A.; Holy, V.; Zhong, Z.; Bauer, G.; Denker, U.; Schmidt, O. G. Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction Appl. Phys. Lett. 2003, 82, 2251-2253
30. Stoffel, M.; Rastelli, A.; Schmidt, O. G. Surface evolution and three-dimensional shape changes of SiGe/Si(001) islands during capping at various temperatures Surf. Sci. 2007, 601, 3052-3059 (Pubitemid 47049722)
31. David, C.; Bruder, J.; Rohbeck, T.; Grunzweig, C.; Kottler, C.; Diaz, A.; Bunk, O.; Pfeiffer, F. Fabrication of diffraction gratings for hard X-ray phase contrast imaging Microelectron. Eng. 2007, 84, 1172-1177 (Pubitemid 46678358)
32. Stangl, J.; Mocuta, C.; Diaz, A.; Metzger, T. H.; Bauer, G. X-Ray Diffraction as a Local Probe Tool Chem. Phys. Chem. 2009, 10, 2923-2930
33. www.comsol.com, Comsol Multiphysics Package.
34. Pietsch, U.; Holy, V.; Baumbach, T. High-resolution X-ray scattering from thin films and multilayers, 2 nd ed.; Springer: Berlin, 2004; p 408.
35. Ross, F. M.; Tromp, R. M.; Reuter, M. C. Transition states between pyramids and domes during Ge/Si island growth Science 1999, 286, 1931-1934 (Pubitemid 129515896)
36. Bonera, E.; Pezzoli, F.; Picco, A.; Vastola, G.; Stoffel, M.; Grilli, E.; Guzzi, M.; Rastelli, A.; Schmidt, O. G.; Miglio, L. Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations Phys. Rev. B 2009, 79, 075321
37. Hrauda, N.; Zhang, J. J.; Stangl, J.; Rehman-Khan, A.; Bauer, G.; Stoffel, M.; Schmidt, O. G.; Jovanovic, V.; Nanver, L. K. X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility J. Vac. Sci. Technol., B 2009, 27, 912-918
38. Diaz, A.; Chamard, V.; Mocuta, C.; Magalhaes-Paniago, R.; Stangl, J.; Carbone, D.; Metzger, T. H.; Bauer, G. Imaging the displacement field within epitaxial nanostructures by coherent diffraction: a feasibility study New J. Phys. 2010, 12, 035006