Surface evolution and three-dimensional shape changes of SiGe/Si(0 0 1) islands during capping at various temperatures

Surface Science

Volumn 601, Issue 14, 2007, Pages 3052-3059

  Stoffel, M ^a   Rastelli, A ^a,b   Schmidt, O G ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

Atomic force microscopy; Epitaxial capping; Selective wet chemical etching; Shape changes; SiGe islands

Indexed keywords

CAPPING LAYER; EPITAXIAL CAPPING; SELECTIVE WET CHEMICAL ETCHING; SHAPE CHANGES;

ATOMIC FORCE MICROSCOPY; SURFACE MEASUREMENT; THERMAL EFFECTS; WET ETCHING;

SILICON COMPOUNDS;

EID: 34447320492     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.05.012     Document Type: Article

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