Modeling of strained CMOS on disposable SiGe dots: Shape impacts on electrical/thermal characteristics

Solid-State Electronics

Volumn 52, Issue 6, 2008, Pages 919-925

  Frégonèse, Sébastien ^a   Zhuang, Yan ^a   Burghartz, Joachim N ^a,b,c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

Author keywords

d DOT FET; MOS; Self heating; Short channel effect; Strain; Stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES;

SHAPE IMPACTS; SHORT CHANNEL EFFECT; SIGE DOTS;

MOSFET DEVICES;

EID: 42749094948     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.01.022     Document Type: Article

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