AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 947-951

  Gregusova, D ^a   Stoklas, R ^a   Io, K ^a   Lalinsky T ^a   Kordo, P ^a,b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MOS DEVICES; PASSIVATION; TRANSCONDUCTANCE;

GATE CHANNEL SEPARATION; GATE OXIDE PASSIVATION; MOSHFET; SATURATION DRAIN CURRENT;

HETEROJUNCTIONS;

EID: 34547444972     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/021     Document Type: Article

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