Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1825-1830

  Saito, Wataru ^a   Nitta, Tomohiro ^a   Kakiuchi, Yorito ^a   Saito, Yasunobu ^a   Tsuda, Kunio ^a   Omura, Ichiro ^a   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN; High voltage; High electron mobility transistor (HEMT); Power semiconductor device

Indexed keywords

ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; MOSFET DEVICES; POWER ELECTRONICS;

GATE-DRAIN CHARGE; HIGH-SPEED SWITCHING CAPABILITY; HIGH-VOLTAGE SWITCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547924055     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901150     Document Type: Article

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