Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

Journal of Physics D: Applied Physics

Volumn 43, Issue 50, 2010, Pages

  Gordon, Luke ^a,b   Miao, Mao Sheng ^b   Chowdhury, Srabanti ^b   Higashiwaki, Masataka ^b   Mishra, Umesh K ^b   Van De Walle, Chris G ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; AL-CONCENTRATION; ALGAN; ALGAN/GAN HETEROJUNCTION; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CONDUCTION-BAND MINIMUM; CONSTANT DENSITY; DONOR LEVELS; DONOR STATE; EXPERIMENTAL OBSERVATION; FINITE DENSITY; SURFACE BARRIER; SURFACE STATE;

ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

TWO DIMENSIONAL;

EID: 78650142709     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/50/505501     Document Type: Article

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