Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Semiconductor Science and Technology

Volumn 25, Issue 7, 2010, Pages

  Lu, C Y ^a,b   Bahat Treidel, E ^b   Hilt, O ^b   Lossy, R ^b   Chaturvedi, N ^b   Chang, E Y ^a   Wurfl J ^b   Trankle G ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; COMPARING DEVICES; DEVICE GEOMETRIES; ENHANCEMENT-MODE; GATE DRAIN; GATE REGION; GATE-LEAKAGE CURRENT; PROPER DESIGN; RECESS DEPTH; SCHOTTKY GATE; TURN ON VOLTAGE;

COMPUTATIONAL GEOMETRY; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77953731849     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/7/075005     Document Type: Article

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