Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

Microelectronics Reliability

Volumn 51, Issue 2, 2011, Pages 224-228

  Casar M ^a   Dammann, M ^a   Polyakov, V ^a   Waltereit, P ^a   Quay, R ^a   Mikulla, M ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CRITICAL FACTORS; ELECTRIC FIELD STRENGTH; FIELD STRENGTHS; GATE EDGE; GROWTH PARAMETERS; VOLTAGE STEP;

GALLIUM NITRIDE;

ELECTRIC FIELDS;

EID: 79551473745     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.09.006     Document Type: Conference Paper

References (11)

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