Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 306-308

  Jimenez A ^b   Buttari, D ^c   Jena, D ^c   Coffie R ^c   Heikman, S ^c   Zhang, N Q ^d   Shen, L ^c   Calleja, E ^b   Munoz E ^b   Speck, J ^c   Mishra, U K ^a,c  

^a IEEE

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c University of California   (United States)

^d NONE

Author keywords

GaN; JFET; Passivation; RF dispersion

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT CONTROL; ELECTRIC RESISTANCE MEASUREMENT; GALLIUM NITRIDE; GATES (TRANSISTOR); LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PASSIVATION; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING;

CURRENT SLUMP SUPPRESSION; POWER ADDED EFFICIENCY; RADIO FREQUENCY DISPERSION; VIRTUAL GATE LENGTH REDUCTION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0036610624     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004217     Document Type: Letter

References (8)

1. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
3. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
4. The impact of surface states on the dc and RF characteristics of AlGaN/GaN HFETs
5. 4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
6. Ion-implanted GaN junction field effect transistor
7. Epitaxially-grown GaN junction field effect transistors
8. Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular epitaxy