Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Solid-State Electronics

Volumn 54, Issue 6, 2010, Pages 660-664

  Kambayashi, Hiroshi ^a   Satoh, Yoshihiro ^a   Ootomo, Shinya ^b   Kokawa, Takuya ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a   Chow, Tat sing Pawl ^c  

^a Advanced Power Device Research Association   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Gallium Nitride; Heterojunction field effect transistor (HFET); MOS; Normally off; Over 100 A operation

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; BEST VALUE; BREAKDOWN VOLTAGE; CHANNEL LENGTH; CHANNEL WIDTHS; FABRICATED DEVICE; HIGH MOBILITY; MAXIMUM DRAIN CURRENT; METAL OXIDE SEMICONDUCTOR; MOS; MOSHFET; N-CHANNEL; ON-STATE RESISTANCE; SI SUBSTRATES; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTING SILICON;

EID: 77950297229     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.001     Document Type: Article

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