Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 361-365

  Jin, Zhi ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

CH4; ECR; GaN; In situ XPS; RIBE

Indexed keywords

ADDITION REACTIONS; DRY ETCHING; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; METHANE; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NITROGEN; PLASMA ETCHING; STOICHIOMETRY; SURFACE CHEMISTRY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

QUANTUM NANOSTRUCTURES;

GALLIUM NITRIDE;

EID: 0037042060     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00853-4     Document Type: Article

References (9)