Influence of the source-gate distance on the AlGaN/GaN HEMT performance

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1071-1075

  Russo, Stefano ^a   Di Carlo, Aldo ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Device scaling; Gallium nitride; HEMT; Monte Carlo simulations; Output current; Transconductance

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON MOBILITY; GALLIUM NITRIDE; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

DEVICE SCALING; OUTPUT CURRENT; SOURCE-DRAIN; SOURCE-GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247854835     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.894614     Document Type: Article

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