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Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

(5) Basile, A F a Rozen, J b,e Williams, J R c Feldman, L C b,d Mooney, P M a

a SIMON FRASER UNIVERSITY (Canada)

b VANDERBILT UNIVERSITY (United States)

c AUBURN UNIVERSITY (United States)

d RUTGERS UNIVERSITY (United States)

e IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CAPACITANCE VOLTAGE; CAPTURE RATE; CONDUCTION BAND EDGE; DEEP LEVEL; DLTS; DLTS SPECTRA; HIGH FREQUENCY HF; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR INTERFACES; NO ANNEALING; OXIDE TRAPS; POLYTYPES; TRANSIENT SPECTROSCOPY;

ANNEALING; CAPACITANCE; CONDUCTION BANDS; ELECTRON MOBILITY; NITRIC OXIDE; POWER QUALITY; SILICON CARBIDE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 79953660118 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3552303 Document Type: Article

Times cited : (60)

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