Trap and inversion layer mobility characterization using Hall effect in silicon carbide-based MOSFETs with gate oxides grown by sodium enhanced oxidation

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 162-169

  Tilak, Vinayak ^a   Matocha, Kevin ^a   Dunne, Greg ^a   Allerstam, Fredrik ^b   Sveinbjornsson, Einar Ö ^b  

^a GE GLOBAL RESEARCH   (United States)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Capacitance voltage (C V); Hall effect; MOS devices; Silicon carbide; Sodium enhanced oxidation (SEO)

Indexed keywords

CAPACITANCE; CONDUCTION BANDS; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; ENERGY GAP; GALVANOMAGNETIC EFFECTS; GATES (TRANSISTOR); GYRATORS; HALL EFFECT; HALL MOBILITY; HEAT CONDUCTION; MEASUREMENTS; MOS DEVICES; MOSFET DEVICES; OXIDATION; OXIDES; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON OXIDES; SODIUM; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

4H-SILICON CARBIDES; BAND GAPS; C-V MEASUREMENTS; CAPACITANCE-VOLTAGE (C-V); CONDUCTION BAND EDGES; COULOMB SCATTERINGS; GATE OXIDES; GATED DIODES; HALL MEASUREMENTS; HALL MOBILITY MEASUREMENTS; HALL-EFFECT MEASUREMENTS; INTERFACE OXIDES; INTERFACE TRAP DENSITIES; INTERFACE TRAP STATE; INTERFACE TRAPS; INVERSION LAYERS; LOW TEMPERATURES; MOSFETS; OXIDE SAMPLES; SODIUM ENHANCED OXIDATION (SEO); SURFACE ROUGHNESS SCATTERINGS; TEMPERATURE DEPENDENTS; TRAP DENSITIES; TRAPPED CHARGES; VOLTAGE CHANGES; VOLTAGE STABILITIES;

MAGNETIC FIELD EFFECTS;

EID: 59849099874     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010601     Document Type: Article

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