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Volumn 28, Issue 4, 2010, Pages 95-102

Passivation of deep levels at the SiO2/SiC interface

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE STATES; PASSIVATION; SEMICONDUCTOR DEVICES; SILICA; SILICON; SILICON CARBIDE;

BULK TRAPS; DEEP-LEVELS; DEFECT LEVELS; NO ANNEALING; OXIDE TRAPS; SIC MOS CAPACITOR; SIO2/SIC INTERFACE; THREE CATEGORIES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 78650438302 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/13377105 Document Type: Conference Paper

Times cited : (4)

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