Effect of NO annealing on 6H- and 4H-SiC MOS interface states

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 499-502

  Basile, A F ^a   Rozen, J ^b   Chen, X D ^a   Dhar, S ^c   Williams, J R ^d   Feldman, L C ^b,e   Mooney, P M ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b VANDERBILT UNIVERSITY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d AUBURN UNIVERSITY   (United States)

^e RUTGERS UNIVERSITY   (United States)

Author keywords

4H SiC; 6H SiC; Electron trapping; Interface states; NO annealing; Silicon dioxide

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACE STATES; SILICA; WIDE BAND GAP SEMICONDUCTORS;

4H-SIC; 6H-SIC; CAPTURE CROSS SECTIONS; CONDUCTION BAND ENERGY; CONSTANT CAPACITANCE; ELECTRON TRAPPING; NO ANNEALING; TEMPERATURE DEPENDENT;

SILICON CARBIDE;

EID: 77955454903     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.499     Document Type: Conference Paper

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