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Volumn 108, Issue 12, 2010, Pages

Excess carbon in silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

C/SI RATIO; CARBON ATOMS; DICARBON; ELECTRONIC DEVICE; INTERSTITIAL CLUSTERS; INTERSTITIALS; PROCESSING STEPS; QUANTUM MOLECULAR DYNAMICS; SIC SUBSTRATES; SILICON LATTICES; TRANSITION LAYERS;

EID: 78650868879     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3517142     Document Type: Article
Times cited : (32)

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