Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: Comparison of dry and wet oxidation

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 490-492

  Bassler, M ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Carbon cluster model; Density of interface states; Long time constant capacitance deep level transient spectroscopy; MOS structure; SiC

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MOS DEVICES; SILICA; SILICON CARBIDE;

INTERFACE STATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032682973     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00459-0     Document Type: Article

References (4)

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3. Nicollian E.H., Goetzberger A. Bell Syst. Techn. J. 46:1966;1055.
4. Schulz M., Klausmann E J. Appl. Phys. 18:1979;169.