Some critical materials and processing issues in SiC power devices

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 646-654

  Agarwal, Anant ^a   Haney, Sarah ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Bulk traps; Effective inversion layer electron mobility; Interface traps; Recombination induced stacking faults; SiC; SiC power devices; SiC SiO2 interface

Indexed keywords

BULK TRAPS; EFFECTIVE INVERSION LAYERS; INTERFACE TRAPS; POWER DEVICES;

BIAS VOLTAGE; DIODES; ELECTRON MOBILITY; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; STACKING FAULTS;

SILICON CARBIDE;

EID: 42449104972     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0321-3     Document Type: Conference Paper

References (19)

1. A. Agarwal, Material Sci Forum 556-557, 687 (2007)
2. A. Agarwal, H. Fatima, S. Haney, S.-H. Ryu, IEEE Electron Device Lett 28, 587 (2007)
3. E. Arnold, IEEE Trans Electron Devices 46, 497 (1999)
4. R. Schörner, P. Friedrichs, D. Peters, D. Stephani, IEEE Electron Device Lett 20, 241 (1999)
5. L.A. Lipkin, J.W. Palmour, J Electron Mater 25, 909 (1996)
6. P. Jamet, S. Dimitrijev, Appl Phys Lett 79, 323 (2001)
7. G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, J.W. Palmour, IEEE Electron Dev Lett 22, 176 (2001)
8. W.J. Choyke, R.P. Devaty, Silicon Carbide-Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, and G. Pensl New York, Springer-Verlag, 413 (2003)
9. N. Achtziger, W. Witthuhn, Silicon Carbide-Recent Major Advances, ed. by W.J. Choyke, H. Matsunami, and G. Pensl, New York: Springer-Verlag, 537 (2003)
10. M.O. Aboelfotoh, J.P. Doyle, Phys Rev B 59, 10823 (1999)
11. S. Mitra, M.V. Rao, N. Papanicolaou, K.A. Jones, M. Derenge, O.W. Holland, R.D. Vispute, S.R. Wilson, J Appl Phys 95, 69 (2004)
12. J.P. Bergman, H. Lendenmann, P.-Å. Nilsson, U. Lindefelt, P. Skytt, Mater Sci Forum 353-356, 299 (2001)
13. J.Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, H. Lendenmann, Appl Phys Lett 80, 749 (2002)
14. M. Skowronski, S. Ha, J Appl Phys 99, 011101 (2006)
15. J.J. Sumakeris, J.P. Bergman, M.K. Das, C. Hallin, B.A. Hull, E. Janzén, H. Lendenmann, M.J. O'Loughlin, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter Jr., Material Sci Forum 527-529, 141 (2006)
16. S-H. Ryu, S. Krishnaswami, B.A. Hull, J. Richmond, A. Agarwal, and A. Hefner, Proceedings of the 18th International Symposium on Power Semiconductor Devices & ICs (Naples, Italy, 2006), pp. 265-268
17. A. Galeckas, J. Linnros, P. Pirouz, Appl Phys Lett 81, 883 (2002)
18. M. Treu, R. Rupp, C.S. Tai, P. Blaschitz, J. Hilsenbeck, H. Brunner, D. Peters, R. Elpelt, T. Reimann, Mater Sci Forum 527-529, 1155 (2006)
19. S. Krishnaswami, A. Agarwal, J. Richmond, T. Paul Chow, B. Geil, K. Jones, and C. Scozzie, Proceedings of the International Symposium on Power semiconductor devices and IC's (ISPSD), (2006), pp. 289-292