Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 545-553

  Rudenko, T E ^a   Osiyuk, I N ^a   Tyagulski, I P ^a   Olafsson H O ^b   Sveinbjornsson E O ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Interface states; MOS structure; SiC SiO2 interface; Thermally stimulated current

Indexed keywords

ACTIVATION ENERGY; DEFECTS; ELECTRON MOBILITY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); IONIZATION; MOS DEVICES; MOSFET DEVICES; OXIDATION; SURFACE PROPERTIES; TEMPERATURE MEASUREMENT;

INTERFACE STATES; MOS-STRUCTURE; SIC/SIO2-INTERFACES; THERMALLY STIMULATED CURRENT (TSC);

SILICON CARBIDE;

EID: 13644283977     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.12.006     Document Type: Article

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