Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

Materials Research Society Symposium Proceedings

Volumn 1246, Issue , 2010, Pages 207-212

  Basile, Alberto F ^a   Dhar, Sarit ^b,e   Rozen, John ^b,f   Chen, Xudong ^a,g   Williams, John R ^c   Feldman, Leonard C ^b,d   Mooney, Patricia M ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b VANDERBILT UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d RUTGERS UNIVERSITY   (United States)

^e Arkansas Power Electronics International Inc   (United States)

^f CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^g REDLEN TECHNOLOGIES   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM NITRIDE; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC DEVICES; ELECTRON EMISSION; FILLING; METALS; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON OXIDES; TEMPERATURE DISTRIBUTION; WIDE BAND GAP SEMICONDUCTORS;

CONSTANT CAPACITANCE; ELECTRON CAPTURE; EMISSION RATES; INTERFACE TRAPS; METAL-OXIDE- SEMICONDUCTORCAPACITORS; SIGNAL-ON; SILICON CARBIDES (SIC); TEMPERATURE DEPENDENCE;

MOS CAPACITORS;

EID: 78650403513     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1246-b09-02     Document Type: Conference Paper

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