Energy- and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2061-2070

  Potbhare, Siddharth ^a   Goldsman, Neil ^a   Akturk, Akin ^a   Gurfinkel, Moshe ^b   Lelis, Aivars ^c   Suehle, John S ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b TEL AVIV UNIVERSITY   (Israel)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

SiC interface trap dynamics; Surface generation recombination; Trap capture cross section

Indexed keywords

DRAIN CURRENT; DYNAMICS; MODELS; MOSFET DEVICES; NONMETALS; POWER GENERATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE;

BAND EDGES; CAPTURE CROSS SECTIONS; CHANNEL ELECTRONS; DEVICE STABILITY; DRIFT-DIFFUSION MODELING; GENERATION-RECOMBINATION; INTERFACE STATES; INTERFACE TRAPPING; MOSFETS; OXIDE TRAPS; PHYSICAL MODEL; PHYSICAL MODELLING; SHORT-TERM STABILITY; SIC INTERFACE TRAP DYNAMICS; SILICON CARBIDE DEVICES; SIMULATION TECHNIQUES; SURFACE GENERATION-RECOMBINATION; TIME DOMAINS; TIME-DEPENDENT DYNAMICS; TRANSIENT RESPONSES; TRAP CAPTURE CROSS-SECTION;

SURFACE CHEMISTRY;

EID: 49249104486     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926668     Document Type: Article

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