Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGeSi heterostructures

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Lu, Jinggang ^a   Park, Yongkook ^a   Rozgonyi, George A ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECT STRUCTURES; SEMICONDUCTING SILICON COMPOUNDS; VALENCE BANDS;

CAPACITANCE VOLTAGE TECHNIQUES; VACANCY CLUSTERS;

HETEROJUNCTIONS;

EID: 42149092226     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903154     Document Type: Article

References (21)

1. W. Schroter and H. Cerva, Solid State Phenom. 85-86, 67 (2002).
2. P. E. Batson, Phys. Rev. Lett. 83, 4409 (1999).
3. J. R. K. Bigger, D. A. McInnes, A. P. Sutton, M. C. Payne, I. Stich, R. D. King-Smith, D. M. Bird, and L. J. Clarke, Phys. Rev. Lett. 69, 2224 (1992).
4. V. Kveder, T. Sekiguchi, and K. Sumino, Phys. Rev. B 51, 16721 (1995).
5. A. Castaldini, D. Cavalcoli, A. Cavallini, and S. Pizzini, Phys. Rev. Lett. 95, 076401 (2005).
6. Z. J. Radzimski, T. Q. Zhou, A. B. Buczkowski, and G. A. Rozgonyi, Appl. Phys. A: Solids Surf. 53, 189 (1991).
7. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, J. Appl. Phys. 78, 4573 (1995).
8. O. V. Feklisova, E. B. Yakimov, N. Yarykin, and B. Pichaud, J. Phys.: Condens. Matter 16, S201 (2004).
9. E. B. Yakimov, R. H. Zhang, G. A. Rozgonyi, and M. Seacrist, Semiconductors 41, 402 (2007).
10. P. Omling, E. Weber, L. Montelius, H. Alexander, and J. Michel, Phys. Rev. B 32, 6571 (1985).
11. K. Rim, J. L. Hoyt, and J. F. Gibbons, IEEE Trans. Electron Devices 47, 1406 (2000).
12. K. Ismail, B. S. Meyerson, and P. J. Wang, Appl. Phys. Lett. 58, 2117 (1991).
13. L. M. Giovane, H. C. Luan, A. M. Agarwal, and L. C. Kimerling, Appl. Phys. Lett. 78, 541 (2001).
14. O. V. Feklisova, B. Pichaud, and E. B. Yakimov, Phys. Status Solidi A 202, 896 (2005).
15. S. Weiss and R. Kassing, Solid-State Electron. 31, 1733 (1988).
16. R. People, IEEE J. Quantum Electron. 22, 1696 (1986).
17. L. C. Kimerling, J. Appl. Phys. 45, 1839 (1974).
18. N. Mott, Trans. Metall. Soc. AIME 218, 962 (1960).
19. H. S. Leipner, C. G. Hubner, T. Staab, M. Haugk, A. Sieck, R. Krause-Rehberg, and T. Frauenheim, J. Phys.: Condens. Matter 12, 10071 (2000).
20. P. N. Grillot, S. A. Ringel, J. Michel, and E. A. Fitzgerald, J. Appl. Phys. 80, 2823 (1996).
21. P. M. Mooney, Mater. Sci. Eng., R. 17, 105 (1996).