Impact of Si substrate nitridation on electrical characteristics of Ta 2O5 stack capacitors

Journal of Physics D: Applied Physics

Volumn 40, Issue 21, 2007, Pages 6709-6717

  Paskaleva, A ^a   Spassov, D ^a   Atanassova, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; NITRIDATION; OXIDATION; PERMITTIVITY; SILICON; TANTALUM COMPOUNDS;

BULK TRAPS; ELECTRICAL CHARACTERISTICS; FILM PERMITTIVITY; SI SUBSTRATE NITRIDATION;

CAPACITORS;

EID: 35548956537     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/21/034     Document Type: Article

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