Different current conduction mechanisms through thin hlgh-k Hf xTiySizO) films due to the varying Hf to Ti ratio

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5583-5590

  Paskaleva, A ^a,d   Bauer, A J ^a   Lemberger, M ^b   Zurcher S ^c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c ETH ZURICH   (Switzerland)

^d INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PHONONS; THERMAL EFFECTS; THIN FILMS; TITANIUM;

CURRENT CONDUCTION MECHANISM; METAL OXIDES; SOURCE PRECURSOR; THERMAL ANNEALING;

HAFNIUM COMPOUNDS;

EID: 2942581196     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1702101     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors (SIA, San Jose, CA, 2001); http://public.itrs.net
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. S. Lee, H. Luan, W. Bai, C. Lee, T. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2000, 31.
4. G. D. Wilk, M. L. Green, M. Y. Ho, B. W. Busch, T. W. Sorsch, F. P. Klemens, B. Brijs, R. B. van Dover, A. Kornblit, T. Gustavsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, and J. M. Hergenrother, Tech. Dig. VLSI Symp. 2002, 88.
5. M. Lemberger, A. Paskaleva, S. Zürcher, A. J. Bauer, L. Frey, and H. Ryssel, J. Non-Cryst. Solids 322, 147 (2003).
6. A. Paskaleva, M. Lemberger, S. Zürcher, A. J. Bauer, L. Frey, and H. Ryssel, Microelectron. Reliab. 43, 1253 (2003).
7. L. Manchanda, M. L. Green, R. B. van Dover, M. D. Morris, A. Kerber, Y. Hu, J. P. Han, P. J. Silverman, T. W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N. A. Ciampa, A. Kornblit, Y. O. Kim, J. E. Bower, D. Barr, E. Ferry, D. Jacobson, J. Eng, B. Busch, and H. Schulte, Tech. Dig. - Int. Electron Devices Meet. 2000, 23.
8. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
9. R. S. Johnson, J. G. Hong, C. Hinkle, and G. Lucovsky, Solid-State Electron. 46, 1799 (2002).
10. Q. Fang, J. Y. Zhang, Z. M. Wang, J. X. Wu, B. J. O'Sullivan, P. K. Hurley, T. L. Leedham, H. Davies, M. A. Audier, C. Jimenez, J.-P. Senateur, and I. W. Boyd, Thin Solid Films 428, 263 (2003).
11. F. Chen, X. Bin, C. Hella, X. Shi, W. L. Gladfelter, and S. A. Campbell, Microelectron. Eng. 72, 63 (2004).
12. S. Zürcher, M. Morstein, M. Lemberger, and A. Bauer, in Chemical Vapor Deposition XVI and EUROCVD 14, edited by M. D. Allendorf, F. Maury, and F. Teyssandier, Electrochemical Society Proceedings Vol. 2003-08 (The Electrochemical Society, Pennington, NJ), Vol. 2, pp. 863-870.
13. J. Robertson, Appl. Surf. Sci. 190, 2 (2003).
14. Z. J. Luo, X. Guo, T. P. Ma, and T. Tamagawa, Appl. Phys. Lett. 79, 2803 (2001).
15. W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim, and Y. Di, IEEE Electron Device Lett. 23, 97 (2002).
16. K. Y. Lim, D. G. Park, H. J. Cho, J. J. Kim, J. M. Yang, I. S. Choi, I. S. Yeo, and J. W. Park, J. Appl. Phys. 91, 414 (2002).
17. Z. Xu, M. Houssa, S. DeGendt, and M. Heyns, Appl. Phys. Lett. 80, 1975 (2002).
18. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 90, 4587 (2001).
19. J. I. Gersten and F. W. Smith, The Physics and Chemistry of Materials (Wiley, New York, 2001).
20. G. A. Niklasson and K. Brantervik, J. Appl. Phys. 59, 980 (1986).