Validity of constant voltage stress based reliability assessment of high-k devices

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 20-24

  Lee, Byoung Hun ^a   Choi, Rino ^a   Sim, Jang Hoan ^a   Krishnan, Siddarth A ^a   Peterson, Jeff J ^a   Brown, George A ^a   Bersuker, Gennadi ^b  

^a SEMATECH   (United States)

^b NONE

Author keywords

Bias temperature instability (BTI); Charge trapping; High k dielectrics; Hot carrier injection (HCI); Metal gate; Reliability; Time dependent dielectric breakdown (TDDB)

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; GATES (TRANSISTOR); HOT CARRIERS; HYSTERESIS; RELIABILITY; SILICA;

BIAS TEMPERATURE INSTABILITY (BTI); CHARGE TRAPPING; HIGH-Κ DIELECTRICS; HOT CARRIER INJECTION (HCI); METAL GATES; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDBB);

DIELECTRIC MATERIALS;

EID: 20444483731     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845807     Document Type: Article

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