On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 815-818

  Petry J ^a,b   Vandervorst, W ^a,b   Pantisano, L ^a   Degraeve, R ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITORS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MOS CAPACITORS; PERMITTIVITY;

CONDUCTING ATOMIC FORCE MICROSCOPY (C-AFM); DATA INTERPRETATION; GATE VOLTAGE; THIN INSULATING LAYERS;

THIN FILMS;

EID: 14644425305     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.041     Document Type: Conference Paper

References (14)

1. Olbrich A, Ebersberger B, Boit C. In: 36th annual international reliability physics symposium, 1998. p. 163-8
2. Wang X-D, Kulik J, Edwards NV, Samavedam SB, Lu S. Mat Res Soc Symp Proc2003;738:G5.5.1-6
3. Goto T, Sakashita S, Ikeda H, Sakashita M, Sakai A, Zaima S, et al. International Workshop on Gater Insulator, Tokyo, Japan; 2001
4. Bender H, Conard T, Nohira H, Pétry J, Richard O, Zhao C, et al. International Workshop on Gater Insulator, Tokyo, Japan; 2001
5. Kremmer S, Peissl S, Teichert C, Kuchar F. In: Proceedings of the 28th international symposium for testing and failure analysis. Phoenix, USA; 2002. p. 473-82
6. J. Pétry, W. Vandervorst, and X. Blasco Microelectron Eng 72 1-4 2003 175 180
7. Hori T. Gate dielectrics and MOS ULSIs, Springer Series in Electronics and Photonics, vol. 34, Springer, Berlin, 1997
8. Houssa M, editor. High-k gate dielectrics. Institute of Physics; 2004
9. G. Bogdan, P. Blomme, M. Rosmeulen, J. Van Houdt, and K. De Meyer Solid-State Electron 47 2003 1045 1053
10. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, and Y. Kim IEEE Electron Dev Lett 24 2 2003 87 89
11. Z. Xu, M. Houssa, R. Carter, M. Naili, and S. De Gendt J Appl Phys 91 12 2002 10127 10129
12. T.G. Ruskell, R.K. Workman, D. Chen, and D. Sarid Appl Phys Lett 68 1 1996 93 95
13. Kerber A, Cartier E, Pantisano L, Rosmeulen M, Degraeve R, Kauerauf T, et al. In: Proceedings of the 41st annual IEEE international reliability physics symposium. Dallas, USA; 2003. p. 41-5
14. F. Crupi, R. Degraeve, G. Groeseneken, T. Nigam, and H. Maes IEEE Trans Electron Dev 45 11 1998 2329 2334